High-Mobility Tri-Gate β-Ga<sub>2</sub>O<sub>3</sub> MESFETs With a Power Figure of Merit Over 0.9 GW/cm<sup>2</sup>
نویسندگان
چکیده
In this letter, fin-shape tri-gate $\beta $ -Ga2O3 lateral MESFETs are demonstrated with a high power figure of merit (PFOM) 0.95 GW/cm2 – record for any transistor to date. A low-temperature un-doped buffer-channel stack design is developed which demonstrates Hall and drift electron mobilities in doped channels allowing low ON resistances (RON) MESFETs. Fin-widths (Wfin) were 1.2- notation="LaTeX">$1.5~\mu \text{m}$ there 25 fins (Nfin) per device trench depth notation="LaTeX">$\sim ~1~\mu . MESFET source-drain length 6.4 notation="LaTeX">$\mu exhibits current (187 mA/mm), RON ( notation="LaTeX">$20.5~\Omega .mm) average breakdown field (4.2 MV/cm). All devices show very reverse leakage until catastrophic voltages (VBR) scaling from 1.1kV ~3kV. This work the potential channel engineering improving performance towards lower conduction losses low-to-medium voltage applications.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2022
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2022.3196305